Inductively-Coupled Plasma Device

ABSTRACT

A plasma device configured to receive ionizable media is disclosed. The plasma device includes a first pair of dielectric substrates each having an inner surface and an outer surface. The first pair of dielectric substrates is disposed in spaced, parallel relation relative to one another with the inner surfaces thereof facing one another. The device also includes a first pair of spiral coils each disposed on the inner surface of the dielectric substrates. The first pair of spiral coils is configured to couple to a power source and configured to inductively couple to an ionizable media passed therebetween to ignite the ionizable media to form a plasma effluent.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is a continuation application of U.S.application Ser. No. 12/606,672 filed on Oct. 27, 2009, the entirecontents of which are incorporated by reference herein.

BACKGROUND

1. Technical Field

The present disclosure relates to plasma devices and processes forsurface processing and material removal or deposition. Moreparticularly, the disclosure relates to an apparatus and method forgenerating and directing plasma-generated species in a plasma device.

2. Background of Related Art

Electrical discharges in dense media, such as liquids and gases at ornear atmospheric pressure, can, under appropriate conditions, result inplasma formation. Plasmas have the unique ability to create largeamounts of chemical species, such as ions, radicals, electrons,excited-state (e.g., metastable) species, molecular fragments, photons,and the like. The plasma species may be generated in a variety ofinternal energy states or external kinetic energy distributions bytailoring plasma electron temperature and electron density. In addition,adjusting spatial, temporal and temperature properties of the plasmacreates specific changes to the material being irradiated by the plasmaspecies and associated photon fluxes. Plasmas are also capable ofgenerating photons including energetic ultraviolet photons that havesufficient energy to initiate photochemical and photocatalytic reactionpaths in biological and other materials that are irradiated by theplasma photons.

SUMMARY

Plasma has broad applicability to provide alternative solutions toindustrial, scientific and medical needs, especially workpiece surfaceprocessing at low temperature. Plasmas may be delivered to a workpiece,thereby affecting multiple changes in the properties of materials uponwhich the plasmas impinge. Plasmas have the unique ability to createlarge fluxes of radiation (e.g., ultraviolet), ions, photons, electronsand other excited-state (e.g., metastable) species which are suitablefor performing material property changes with high spatial, materialselectivity, and temporal control. The plasma may remove a distinctupper layer of a workpiece but have little or no effect on a separateunderlayer of the workpiece or it may be used to selectively remove aparticular tissue from a mixed tissue region or selectively remove atissue with minimal effect to adjacent organs of different tissue type.

According to one embodiment of the present disclosure a plasma deviceconfigured to receive ionizable media is disclosed. The plasma deviceincludes a first pair of dielectric substrates each having an innersurface and an outer surface. The first pair of dielectric substrates isdisposed in spaced, parallel relation relative to one another with theinner surfaces thereof facing one another. The device also includes afirst pair of spiral coils each disposed on the inner surface of thedielectric substrates. The first pair of spiral coils is configured tocouple to a power source and configured to inductively couple to anionizable media passed therebetween to ignite the ionizable media toform a plasma effluent.

According to another embodiment of the present disclosure a plasmadevice configured to receive ionizable media is disclosed. The plasmadevice includes a first pair of dielectric substrates each having aninner surface and an outer surface. The first pair of dielectricsubstrates is disposed in spaced, parallel relation relative to oneanother with the inner surfaces thereof facing one another. The plasmadevice also includes a second pair of dielectric substrates coupled tothe first pair of dielectric substrates and disposed transverselyrelative thereto, each of the second pair of dielectric substratesincludes an inner surface and an outer surface. The second pair ofdielectric substrates is also disposed in spaced, parallel relationrelative to one another with the inner surfaces thereof facing oneanother. The plasma device further includes a first pair of spiral coilseach disposed on the inner surface of the dielectric substrates and asecond pair of spiral coils each disposed on the inner surface of thesecond dielectric substrates. The first and second pairs of spiral coilsare configured to couple to the power source and configured toinductively couple to the ionizable media passed therebetween to ignitethe ionizable media to form a plasma effluent.

According to a further embodiment of the present disclosure a plasmasystem is disclosed. The plasma system includes a plasma device having afirst pair of dielectric substrates each having an inner surface and anouter surface. The first pair of dielectric substrates is disposed inspaced, parallel relation relative to one another with the innersurfaces thereof facing one another. The device also includes a firstpair of spiral coils each disposed on the inner surface of thedielectric substrates. The system also includes an ionizable mediasource coupled to the plasma device and configured to supply ionizablemedia between the first pair of dielectric substrates and a power sourcecoupled to the first pair of spiral coils. The first pair of spiralcoils is configured to inductively couple to the ionizable media passedtherebetween to ignite the ionizable media to form a plasma effluent.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of this specification, illustrate exemplary embodiments of thedisclosure and, together with a general description of the disclosuregiven above, and the detailed description of the embodiments givenbelow, serve to explain the principles of the disclosure, wherein:

FIG. 1 is a schematic diagram of a plasma system according to thepresent disclosure;

FIG. 2 is a perspective view of a plasma device according to the presentdisclosure;

FIG. 3 is a side, cross-sectional view of the plasma device of FIG. 2according to the present disclosure;

FIG. 4 is a plot of a vertical magnetic field intensity generated by theplasma device of FIG. 2;

FIG. 5 is a plot of a horizontal magnetic field intensity generated bythe plasma device of FIG. 2;

FIG. 6 is a perspective view of a plasma device according to the presentdisclosure;

FIG. 7 is a side, cross-sectional view of the plasma device of FIG. 6according to the present disclosure;

FIG. 8 is a plot of a horizontal magnetic field intensity generated bythe plasma device of FIG. 6;

FIG. 9 is a perspective view of a plasma device according to the presentdisclosure;

FIG. 10 is a side, cross-sectional view of the plasma device of FIG. 9according to the present disclosure;

FIG. 11 is a perspective view of a plasma device according to thepresent disclosure;

FIG. 12 is a side, cross-sectional view of the plasma device of FIG. 9according to the present disclosure.

FIG. 13 is a perspective view of a plasma device according to thepresent disclosure; and

FIG. 14 is a side, cross-sectional view of the plasma device of FIG. 9according to the present disclosure.

DETAILED DESCRIPTION

Plasmas are generated using electrical energy that is delivered aseither direct current (DC) electricity or alternating current (AC)electricity at frequencies from about 0.1 hertz (Hz) to about 100gigahertz (GHz), including radio frequency (“RF”, from about 0.1 MHz toabout 100 MHz) and microwave (“MW”, from about 0.1 GHz to about 100 GHz)bands, using appropriate generators, electrodes, and antennas. Choice ofexcitation frequency, the workpiece, as well as the electrical circuitthat is used to deliver electrical energy to the circuit affects manyproperties and requirements of the plasma. The performance of the plasmachemical generation, the delivery system and the design of theelectrical excitation circuitry are interrelated, i.e., as the choicesof operating voltage, frequency and current levels (as well as phase)effect the electron temperature and electron density. Further, choicesof electrical excitation and plasma device hardware also determine how agiven plasma system responds dynamically to the introduction of newingredients to the host plasma gas or liquid media. The correspondingdynamic adjustment of the electrical drive, such as dynamic matchnetworks or adjustments to voltage, current, or excitation frequency arerequired to maintain controlled power transfer from the electricalcircuit to the plasma.

Referring initially to FIG. 1, a plasma system 10 is disclosed. Thesystem 10 includes an inductively-coupled device 12 that is coupled to apower source 14 and an ionizable media source 16. Power source 14includes any required components for delivering power or matchingimpedance to plasma device 12. More particularly, the power source 14may be any radio frequency generator or other suitable power sourcecapable of producing power to ignite the ionizable media to generateplasma. The plasma device 12 may be utilized as an electrosurgicalpencil for application of plasma to tissue and the power source 14 maybe an electrosurgical generator that is adapted to supply the device 12with electrical power at a frequency from about 0.1 MHz to about 1,000MHz and, in another embodiment, from about 1 MHz to about 13.6 MHz. Theplasma may also be ignited by using continuous or pulsed direct current(DC) electrical energy.

Power source 14 includes a signal generator 20 coupled to an amplifier22. The signal generator 20 outputs a plurality of control signals tothe amplifier 22 reflective of the desired waveform. The signalgenerator 20 allows for control of desired waveform parameters (e.g.,frequency, duty cycle, amplitude, etc.). The amplifier 22 outputs thedesired waveform at a frequency from about 0.1 MHz to about 1,000 MHzand in another illustrative embodiment from about 1 MHz to about 13.6MHz. The power source 14 also includes a matching network 24 coupled tothe amplifier 22. The matching network 24 may include one or morereactive and/or capacitive components that are configured to match theimpedance of the load (e.g., plasma effluent) to the power source 14 byswitching the components or by frequency tuning.

The system 10 provides a flow of plasma through the device 12 to aworkpiece “W” (e.g., tissue). Plasma feedstocks, which include ionizablemedia 30 (FIG. 2), are supplied by the ionizable media source 16 to theplasma device 12. During operation, the ionizable media is provided tothe plasma device 12 where the plasma feedstocks are ignited to formplasma effluent 32 containing ions, radicals, photons from the specificexcited species and metastables that carry internal energy to drivedesired chemical reactions in the workpiece “W” or at the surfacethereof.

The ionizable media source 16 provides ionizable feedstock to the plasmadevice 12. The ionizable media source 16 may include a storage tank anda pump (not explicitly shown) that is coupled to the plasma device 12.The ionizable media may be a liquid or a gas such as argon, helium,neon, krypton, xenon, radon, carbon dioxide, nitrogen, hydrogen, oxygen,etc. and their mixtures, and the like, or a liquid. These and othergases may be initially in a liquid form that is gasified duringapplication.

The device 12 is an inductively-coupled plasma device. In one embodimentas shown in FIGS. 2 and 3, an inductively-coupled plasma device 42includes a spiral coil 44 disposed on a dielectric substrate 46. Thecoil 44 is coupled to the generator 14, which supplies currenttherethrough thereby generating a magnetic field above the coil 44. Theionizable media 30 is supplied across the coil 44 and is ignited as itpasses through the magnetic field.

The coil 44 is of planar spiral coil design having a predetermineddiameter “d” and a predetermined number of turns “n.” The coil 44 may beformed from a copper wire of a suitable gauge. The coil 44 may be woundfrom the center or another location to create disk-like or ring-likestructures, respectively. Alternatively, the coil 44 may be an etchedcopper coil on a printed circuit board.

A single plane configuration (e.g., a single spiral coil 44) generatesthe plasma plume 30 having a diffuse half-plane field intensity that isproportional to the magnetic field intensity generated by the coil 44 asillustrated by magnetic field intensity plots of FIGS. 4 and 5. FIG. 4illustrates a plot of the magnetic field intensity with respect to thevertical distance from center “c” of the coil 44. The field intensitydecreases as a function of the distance from the coil. As a result, theplasma plume is thickest at the center of the single spiral coil anddecreases toward the outer edge thereof. FIG. 5 illustrates a plot ofthe magnetic field intensity with respect to the horizontal distance “x”from the center “c” of the coil 44. Field intensity similarly decreasesas a function of the distance from the center of the coil 44. This isdue to poor coupling of the coil 44 with the plasma. In one embodiment,the coil 44 may be wound such that the outer rings thereof are spacedmore densely than the inner rings. In another embodiment, a solenoid maybe used in place of the spiral coil to improve the coupling efficiency,however, the structure of the solenoid prevents access to the insidethereof and to the plasma generated therein.

The present disclosure provides for another embodiment of aninductively-coupled plasma device 50 having two spiral coils 54 and 56disposed in parallel at a predetermined distance “x” apart as shown inFIGS. 6 and 7. The plasma device 50 includes a first dielectricsubstrate 51 and a second dielectric substrate 52. The first and seconddielectric substrates 51 and 52 include inner and outer surfaces 55 a,57 a and 55 b, 57 b, respectively. The plasma device 50 also includes afirst spiral coil 54 and a second spiral coil 56 disposed on the innersurfaces 55 a, 55 b of the first and second dielectric substrates 51 and52, respectively. The coils 54 and 56 are of planar spiral coil designhaving a predetermined diameter “d” and a predetermined number of turns“n.” The coils 54 and 56 may be formed from a copper wire of a suitablegauge or may be etched on a printed circuit board and suitably arrangedin multiple layers. The coils 54 and 56 are wound either from the centeror another location to create disk-like (FIGS. 9 and 10) or ring-likestructures (FIGS. 6 and 7), respectively.

The dielectric substrates 51 and 52 may be formed from epoxy or anyother type of thermosetting dielectric polymer to form a printed circuitboard with the coils 54 and 56 being embedded therein (e.g., traced,etched, or printed). The dielectric substrates 51 and 52 are separatedby two or more offsets 58 to secure the substrates 51 and 52, such thatthe spiral coils 54 and 56 are disposed in parallel relative to eachother and are set a predetermined distance “x” apart. Each of thedielectric substrates 51 and 52 includes an opening 53 a and 53 b,respectively, defined therethrough.

The plasma feedstocks are fed from one end of the device 50 through theopening 53 a and are ignited as the coils 54 and 56 are energized toform a plasma effluent that is emitted from the opening 53 b of thedevice 50 onto the workpiece “W.” The field intensity stays relativelyconstant within the coils 54 and 56. FIG. 8 illustrates a plot of themagnetic field intensity with respect to the distance “x” along thecenter line “C” of the coils 54 and 56. The linearity and the intensityof magnetic field generated by the coils 54 and 55 do not drop off atthe edges of the coils 54 and 55 as dramatically as the magnetic fieldintensity of the single coil 44 as illustrated in FIGS. 4 and 5. Themagnetic field, H, may be expressed by a formula (1):

$\begin{matrix}{|H| = {\frac{\pi \cdot n \cdot i}{5 \cdot r_{c}}\left\lbrack {\left\{ {1 + \frac{x^{2}}{r_{c}^{2}}} \right)^{{- 3}\text{/}2} + \left\{ {1 + \left( \frac{r_{c} - x}{r_{c}} \right)^{2}} \right\}^{{- 3}\text{/}2}} \right\rbrack}} & (1)\end{matrix}$

In formula (1), r_(c) is the radius of the coils 54 and 56, x is thedistance between coils 54 and 56, and n is the number of turns and i isthe coil current. Based on the formula (1), the intensity of themagnetic field, H, and the radius, re, are inversely proportional. Thus,the intensity may be increased by decreasing the radius of the coils 54and 56. At the center of the coils 54 and 56, the field is approximatedby the formula (2):

$\begin{matrix}{|H| = \frac{\pi \cdot n \cdot i}{5 \cdot r_{c}}} & (2)\end{matrix}$

In another embodiment, as shown in FIGS. 9 and 10, each of the coils 54and 56 may have a disk-like shape, in which instance the substrates 51and 52 have a solid surface (e.g., no openings 53 and 53 b) and theionizable media is fed between and through the substrates 51 and 52.

FIGS. 11 and 12 illustrate another embodiment of an inductively-coupledplasma device 60 having four spiral coils 64, 66, 68 and 70. The plasmadevice 60 includes a first dielectric substrate 61 and a seconddielectric substrate 62. The first and second dielectric substrates 61and 62 include inner and outer surfaces 85 a, 86 a and 85 b, 86 b,respectively. The plasma device also includes a first spiral coil 64 anda second spiral coil 66 disposed on the inner surfaces 85 a, 86 b of thefirst and second dielectric substrates 61 and 62, respectively.

The plasma device 60 also includes third and fourth dielectricsubstrates 63 and 65 disposed transversely between the substrates 61 and62. The third and fourth dielectric substrates 63 and 65 include innerand outer surfaces 85 c, 86 c and 85 d, 86 d, respectively. The plasmadevice also includes a third spiral coil 68 and a fourth spiral coil 70disposed on the inner surfaces 85 c, 86 d of the third and fourthdielectric substrates 63 and 65, respectively.

The coils 64, 66, 68 and 70 are of planar spiral coil design having apredetermined diameter “d” and a predetermined number of turns “n.” Thecoils 64, 66, 68 and 70 may be formed from a copper wire of a suitablegauge or may be etched copper coils on a printed circuit board suitablyarranged in multiple layers. The coils 64, 66, 68 and 70 may be woundfrom the center or another location to create disk-like (FIGS. 13 and14) or ring-like structures (FIGS. 11 and 12), respectively.

The dielectric substrates 61, 62, 63, 65 may be formed from epoxy or anyother type of thermosetting dielectric polymer to form a printed circuitboard with the coils 64, 66, 68, 70 being embedded therein (e.g.,traced). The dielectric substrates 61 and 62 are separated by two ormore offsets (not shown) that secure the substrates 61 and 62, such thatthe spiral coils 64 and 66 are disposed in parallel and are set apart bythe predetermined distance “x.” The substrates 63 and 65 are alsodisposed in parallel with respect to each other. The substrates 63 and65 are transversely secured within the substrates 61 and 62. Theconfiguration of the substrates 61, 62, 63, 65 arranges the coils 64,66, 68, 70 in a four-walled chamber 74. Each of the dielectricsubstrates 61 and 62 includes an opening 73 a and 73 b, respectively,defined therethrough.

The ionizable media 30 is fed from the opening 73 a end of the device 60and is ignited as the coils 64, 66, 68, 70 are energized to form theplasma effluent 32 (e.g., point-source or ball plasma), which is emittedfrom the opening 73 b of the device 60 onto the workpiece “W.” The fieldintensity stays relatively constant within the coils 64 and 66 and thesurface of the coils 68 and 70. Transverse arrangement of the coils 64,66 and 68, 70 allows for three-dimensional control of the plasmaeffluent 32.

In another embodiment, as shown in FIGS. 13 and 14, each of the coils 68and 70 may have a disk-like shape, and the ionizable media is fedbetween and through the openings 73 a and 73 b as shown in FIGS. 13 and14.

Although the illustrative embodiments of the present disclosure havebeen described herein with reference to the accompanying drawings, it isto be understood that the disclosure is not limited to those preciseembodiments, and that various other changes and modifications may beeffected therein by one skilled in the art without departing from thescope or spirit of the disclosure.

1. A plasma device configured to receive ionizable media, comprising: afirst pair of spiral coils disposed in spaced, parallel relationrelative to one another and defining a first opening therethrough,wherein the first pair of spiral coils is configured to couple to apower source and configured to inductively couple to an ionizable mediapassed through the first opening to ignite the ionizable media to form aplasma effluent.
 2. The plasma device according to claim 1, furthercomprising a first pair of dielectric substrates each of which comprisesone of the first pair of spiral coils.
 3. The plasma device according toclaim 2, wherein the first pair of dielectric substrates defines asecond opening that is substantially aligned with the first opening. 4.The plasma device according to claim 2, further comprising: a pluralityof offsets disposed between the first pair of dielectric substrates. 5.The plasma device according to claim 2, wherein each of the dielectricsubstrates of the first pair of dielectric substrates is formed from athermosetting dielectric polymer.
 6. The plasma device according toclaim 2, wherein each of the spiral coils of the first pair of spiralcoils is traced on the corresponding dielectric substrate.
 7. The plasmadevice according to claim 1, further comprising: a second pair of spiralcoils disposed in spaced, parallel relation relative to one another andtransverse relation relative to the first pair of spiral coils, whereinthe second pair of spiral coils is configured to couple to the powersource and configured to inductively couple to the ionizable mediapassed therebetween to ignite the ionizable media to form the plasmaeffluent.
 8. The plasma device according to claim 7, wherein each of thesecond pair of spiral coils is formed from a wire to form a disk-likestructure.
 9. The plasma device according to claim 7, wherein each ofthe second pair of spiral coils is formed from a wire to form aring-like structure.
 10. The plasma device according to claim 7, asecond pair of dielectric substrates coupled to the first pair ofdielectric substrates and disposed transversely relative thereto, eachof the second pair of dielectric substrates comprises one of the secondpair of spiral coils.
 11. A plasma device configured to receiveionizable media, comprising: a first pair of spiral coils disposed inspaced, parallel relation relative to one another and defining a firstopening therethrough; and a second pair of spiral coils disposed inspaced, parallel relation relative to one another and transverserelation relative to the first pair of spiral coils, wherein the firstand second pairs of spiral coils are configured to couple to a powersource and configured to inductively couple to an ionizable media passedthrough the first opening to ignite the ionizable media to form a plasmaeffluent.
 12. The plasma device according to claim 11, wherein each ofthe second pair of spiral coils is formed from a wire to form adisk-like structure.
 13. The plasma device according to claim 11,wherein each of the second pair of spiral coils is formed from a wire toform a ring-like structure.
 14. The plasma device according to claim 11,further comprising a first pair of dielectric substrates each of whichcomprises one of the first pair of spiral coils.
 15. The plasma deviceaccording to claim 14, wherein the first pair of dielectric substratesdefines a second opening that is substantially aligned with the firstopening.
 16. The plasma device according to claim 14, furthercomprising: a second pair of dielectric substrates coupled to the firstpair of dielectric substrates and disposed transversely relativethereto, each of the second pair of dielectric substrates comprises oneof the second pair of spiral coils.
 17. The plasma device according toclaim 16, wherein each of the dielectric substrates of the first andsecond pairs of dielectric substrates is formed from a thermosettingdielectric polymer.
 18. A plasma system, comprising: a plasma devicecomprising a first pair of spiral coils disposed in spaced, parallelrelation relative to one another and defining a first openingtherethrough; an ionizable media source coupled to the plasma device andconfigured to supply ionizable media between the first pair ofdielectric substrates; and a power source coupled to the first pair ofspiral coils, wherein the first pair of spiral coils is configured toinductively couple to an ionizable media passed through the firstopening to ignite the ionizable media to form a plasma effluent.
 19. Theplasma system according to claim 18, further comprising a first pair ofdielectric substrates each of which comprises one of the first pair ofspiral coils, wherein each of the first pair of dielectric substratesdefines a second opening that is substantially aligned with the firstopening.
 20. The plasma system according to claim 19, furthercomprising: a second pair of spiral coils disposed in spaced, parallelrelation relative to one another and transverse relation relative to thefirst pair of spiral coils, wherein the second pair of spiral coils isconfigured to couple to the power source and configured to inductivelycouple to the ionizable media passed therebetween to ignite theionizable media to form the plasma effluent; and a second pair ofdielectric substrates coupled to the first pair of dielectric substratesand disposed transversely relative thereto, each of the second pair ofdielectric substrates comprises one of the second pair of spiral coils.